Title :
Comparison of bulk vs SOI for low power low voltage CMOS imager
Author :
Afzalian, Aryan ; Delatte, P. ; Legat, J.-D. ; Flandre, D.
Author_Institution :
Lab. de Microelectronique, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
To compare bulk silicon and SOI technologies in the field of CMOS image sensors, the authors have developed an analytical model of an APS circuit and applied it to the design of a 50 frames per second 512x512 pixels imager.
Keywords :
CMOS image sensors; elemental semiconductors; integrated circuit design; integrated circuit modelling; low-power electronics; silicon; silicon-on-insulator; 262144 pixel; 512 pixel; APS circuit; CMOS image sensors; SOI; Si-SiO/sub 2/; analytical model; bulk silicon; low power low voltage CMOS imager; Circuit noise; Low voltage; Threshold voltage;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958022
