Title :
A tri-state body charge modulated SOI sense amplifier
Author :
Kuang, J.B. ; Chuang, C.T.
Author_Institution :
Adv. Server Dev., IBM Corp., Rochester, MN, USA
Abstract :
We present a tri-state dynamic body charge modulation technique for sense and differential amplifiers in SOI technology. To execute a RAM read function, sensing devices are designed to cycle through three distinctive (i.e., high body bias, floating body, and low body bias) states. This technique delivers high speed sensing, good matching characteristics, and low standby leakage simultaneously, and, therefore, is suitable for low-power high-performance applications.
Keywords :
CMOS logic circuits; CMOS memory circuits; SRAM chips; differential amplifiers; silicon-on-insulator; RAM read function; SOI sense amplifier; differential amplifiers; dynamic body charge modulation; floating body; high body bias; high speed sensing; low body bias; low standby leakage; low-power high-performance applications; tristate body charge modulated amplifier; Circuits; Differential amplifiers; FETs; Immune system; Jamming; Leakage current; Random access memory; Switches; Timing; Voltage control;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958023
