A tri-state body charge modulated SOI sense amplifier

We present a tri-state dynamic body charge modulation technique for sense and differential amplifiers in SOI technology. To execute a RAM read function, sensing devices are designed to cycle through three distinctive (i.e., high body bias, floating body, and low body bias) states. This technique delivers high speed sensing, good matching characteristics, and low standby leakage simultaneously, and, therefore, is suitable for low-power high-performance applications.