DocumentCode :
1669932
Title :
Growth and optical properties of ZnO nanorods prepared through hydrothermal growth followed by chemical vapor deposition
Author :
Han, Seok Kyu ; Kang, Dong-Suk ; Hong, Soon-Ku ; Kim, Min-Jung ; Song, Jae-Ho ; Song, Jung-Hoon ; Kim, Hyojin ; Kim, Dojin ; Lee, Jae Wook ; Lee, Jeong Yong
Author_Institution :
Dept. of Adv. Mater. Eng., Chungnam Nat. Univ., Daejeon, South Korea
fYear :
2010
Firstpage :
1098
Lastpage :
1099
Abstract :
Very well aligned vertical ZnO nanorods with high optical quality were successfully synthesized by sequentially employing an aqueous solution method on a ZnO seed layer and a thermal chemical vapor deposition (CVD). The process is growing the upper ZnO nanorods by using CVD on top of the bottom nanorods synthesized by using an aqueous solution method on a Si substrate with a ZnO seed layer. These double-structured-nanorods showed a significant improvement of optical quality. The CVD re-grown upper nanorods showed orders-of-magnitude enhancement of the band edge emission and complete compression of the deep level emissions, compared with the solution-grown bottom nanorods. By comparing emission spectra from the series of samples with and without the seed layer or the second CVD growth, we can conclude that the improvement can only be achieved by combining the CVD, the solution-based synthesis technique, and the seed layer.
Keywords :
II-VI semiconductors; chemical vapour deposition; deep levels; nanofabrication; nanorods; optical materials; photoluminescence; semiconductor growth; wide band gap semiconductors; zinc compounds; CVD; Si; ZnO; aligned vertical nanorods; aqueous solution method; band edge emission; deep level emissions; double structured nanorods; hydrothermal growth; photoluminescence spectra; seed layer; silicon substrate; thermal chemical vapor deposition; zinc oxide nanorod growth; Chemical vapor deposition; Materials science and technology; Nanowires; Optical materials; Physics; Powders; Reflection; Stimulated emission; Thermal engineering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425011
Filename :
5425011
Link To Document :
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