Title :
A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization
Author :
Dainesi, P. ; Thevenaz, L. ; Fluckiger, Ph. ; Hibert, C. ; Racine, G. ; Robert, Ph. ; Renaud, Ph. ; Ionescu, A.M. ; Declercq, M.
Author_Institution :
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 /spl mu/m CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multiple PIN diode bars integrated on top of a SOI silicon waveguide and can be operated either at: (I) high-frequency (few MHz) based on the plasma dispersion effect and (II) low frequency (<1 MHz) based on the thermo-optic effect. The device main characteristics and figures of merit are presented and discussed.
Keywords :
CMOS integrated circuits; Mach-Zehnder interferometers; electro-optical devices; electro-optical filters; integrated optoelectronics; optical communication equipment; optical fabrication; p-i-n photodiodes; silicon-on-insulator; thermo-optical effects; 1.2 micron; CMOS SOI unbalanced Mach-Zehnder interferometer; SOI silicon waveguide; Si; adapted post-processing; characterization; design; device main characteristics; electro-optical device; fabrication; figures of merit; high frequency; low frequency; multiple PIN diode bars; plasma dispersion effect; simulations; telecommunication applications; thermo-optic effect; waveguide sidewalls; Bars; CMOS process; Dispersion; Electrooptic devices; Electrooptical waveguides; Frequency; Plasma devices; Plasma properties; Plasma waves; Silicon;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958024
