Effect of annealing on the properties of p-type nano Zn0.92Mn0.08O∶N Films

P-type conductive Zn_0.92Mn_0.08O:N thin films have been fabricated on quartz glass substrates by RF magnetron sputtering together with the direct implantation of N ions and post-annealing at appropriate condition. The XRD results indicate that all the films have c-axis preferred orientation, no manganese oxide or nitride phase were detected in both the as-deposited and the annealed films. The Mn-N co-doped ZnO films annealed at 650°C from 10 to 30 minutes show good p-type conductivity with the hole concentration of 10¹⁶ - 10¹⁷ cm^-3. Owing to electrical activation, a lot of N on substitutional sites can distribute into O site, coming into being N-Mn or N-Zn bonds as the activated acceptor which would induce low resistivity p-type conduction. The band gaps of Mn-N co-doped ZnO films are slightly lower than that of undoped ZnO film(3.29 eV).