Title :
Measuring complex for thin films degradation investigations under various external actions
Author :
Pykhtin, N.V. ; Borovsky, A.L. ; Shugurov, A.P.
Author_Institution :
Inst. of Strength Phys. & Mater. Sci., Tomsk Polytech. Univ., Russia
Abstract :
The given paper is dedicated to develop the measurement complex for the thin films approval and to investigate their degradation in passing current of high density. The investigations performed on the electrical resistance of Ag thin-film conductors have shown that a combination of optical and scanning tunnel microscopy allows one to track the macroscopic samples destruction and to investigate the changing of the surface morphology on different scale levels. The results obtained can be used in developing new materials for microelectronics.
Keywords :
electrical resistivity; metallic thin films; optical microscopy; scanning tunnelling microscopy; silver; Ag; Ag conductor; current density; electrical resistance; measurement system; optical microscopy; scanning tunnel microscopy; surface morphology; thin film degradation; Conducting materials; Conductive films; Current measurement; Degradation; Density measurement; Electric resistance; Electrical resistance measurement; Optical films; Optical microscopy; Transistors;
Conference_Titel :
Modern Technique and Technologies, 2002. MTT 2002. Proceedings of the 8th International Scientific and Practical Conference of Students, Post-graduates and Young Scientists
Print_ISBN :
0-7803-7373-1
DOI :
10.1109/SPCMTT.2002.1213723
