Title :
Nanoscale SOI ballistic MOSFETs: an impending power crisis
Author :
Sverdlov, Viktor ; Naveh, Y. ; Likharev, K.
Author_Institution :
State Univ. of New York, Stony Brook, NY, USA
Abstract :
Recently, we extended our previous modeling study of 10-nm-scale SOI MOSFETs to the calculation of minimum total (static + dynamic) power dissipated in future CMOS circuits based on such devices. The results show a dramatic increase of the power as soon as the gate length is decreased beyond the crossover between the drift-diffusion and ballistic electron transport. The goal of our presentation is to give a brief summary of our findings.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; integrated circuit modelling; nanotechnology; power consumption; semiconductor device models; silicon; silicon-on-insulator; 10 nm; CMOS circuits; SOI MOSFETs; Si-SiO/sub 2/; ballistic electron transport; crossover; drift-diffusion transport; dynamic power; gate length; minimum total power; nanoscale SOI ballistic MOSFETs; static power; CMOS technology; Clocks; Current density; Electrons; Energy management; Joining processes; Logic circuits; MOSFET circuits; Semiconductor device modeling; Voltage;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958031
