DocumentCode
1670361
Title
Study on the changes of surface property of grown C-TiO2 films by O2 plasma treatment
Author
Lee, Kang Suk ; Nam, Sang-Hun ; Seo, Hyun Ook ; Lee, Sang Duck ; Kim, Young Dok ; Boo, Jin-Hyo
Author_Institution
Dept. of Chem., Sungkyunkwan Univ., Suwon, South Korea
fYear
2010
Firstpage
1082
Lastpage
1083
Abstract
In the previous work, we reported that TiO2 nanorods could be successfully grown on Ta substrates using titanium tetra isopropoxide (TTIP) as a single precursor without any carriers or bubbling gases. In the mean time, columnar-structured C doped TiO2 was grown on glass substrates by MOCVD method. For change of surface properties, grown columnar-structured C-TiO2 was treated by O2 plasma. After O2 plasma treatment, the surface property of grown columnar-structured C-TiO2 changed from hydrophobic surface to super hydrophilic surface. For determination of this mechanism, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectroscopy, and contact angle analyzer were employed.
Keywords
Fourier transform spectra; MOCVD coatings; X-ray diffraction; X-ray photoelectron spectra; carbon; catalysts; contact angle; hydrophilicity; hydrophobicity; infrared spectra; nanorods; plasma materials processing; scanning electron microscopy; semiconductor growth; semiconductor thin films; titanium compounds; FT-IR spectroscopy; MOCVD method; SEM; TiO2:C; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; columnar-structured nanorods; contact angle analyzer; glass substrates; hydrophilic surface; hydrophobic surface; photocatalyst; plasma treatment; scanning electron microscopy; surface property; titanium tetra isopropoxide; Gases; Glass; MOCVD; Photoelectron microscopy; Plasma properties; Plasma x-ray sources; Scanning electron microscopy; Spectroscopy; Surface treatment; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425025
Filename
5425025
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