• DocumentCode
    1670361
  • Title

    Study on the changes of surface property of grown C-TiO2 films by O2 plasma treatment

  • Author

    Lee, Kang Suk ; Nam, Sang-Hun ; Seo, Hyun Ook ; Lee, Sang Duck ; Kim, Young Dok ; Boo, Jin-Hyo

  • Author_Institution
    Dept. of Chem., Sungkyunkwan Univ., Suwon, South Korea
  • fYear
    2010
  • Firstpage
    1082
  • Lastpage
    1083
  • Abstract
    In the previous work, we reported that TiO2 nanorods could be successfully grown on Ta substrates using titanium tetra isopropoxide (TTIP) as a single precursor without any carriers or bubbling gases. In the mean time, columnar-structured C doped TiO2 was grown on glass substrates by MOCVD method. For change of surface properties, grown columnar-structured C-TiO2 was treated by O2 plasma. After O2 plasma treatment, the surface property of grown columnar-structured C-TiO2 changed from hydrophobic surface to super hydrophilic surface. For determination of this mechanism, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectroscopy, and contact angle analyzer were employed.
  • Keywords
    Fourier transform spectra; MOCVD coatings; X-ray diffraction; X-ray photoelectron spectra; carbon; catalysts; contact angle; hydrophilicity; hydrophobicity; infrared spectra; nanorods; plasma materials processing; scanning electron microscopy; semiconductor growth; semiconductor thin films; titanium compounds; FT-IR spectroscopy; MOCVD method; SEM; TiO2:C; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; columnar-structured nanorods; contact angle analyzer; glass substrates; hydrophilic surface; hydrophobic surface; photocatalyst; plasma treatment; scanning electron microscopy; surface property; titanium tetra isopropoxide; Gases; Glass; MOCVD; Photoelectron microscopy; Plasma properties; Plasma x-ray sources; Scanning electron microscopy; Spectroscopy; Surface treatment; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425025
  • Filename
    5425025