Switching assessment of GaN transistors for power conversion applications

Author

Das, J. ; Marcon, D. ; Hove, M. Van ; Derluyn, J. ; Germain, M. ; Borghs, G.

Author_Institution

IMEC, Leuven, Belgium

fYear

2009

Firstpage

1

Lastpage

6

Abstract

GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows for a cost effective solution for power conversion.

Keywords

III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; power convertors; power semiconductor devices; silicon; wide band gap semiconductors; DHFET device; GaN; GaN based devices; GaN transistors; III-nitride components; Si; breakdown voltage; power conversion applications; power semiconductor devices; semiconductor heterojunctions; switching assessment; switching behavior; switching transients; Aluminum gallium nitride; Costs; DH-HEMTs; Gallium nitride; Gold; HEMTs; MODFETs; Photonic band gap; Power conversion; Substrates; Modeling; Power Semiconductor Devices; Semiconductor Heterojunctions; Switching Transients;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5279113