• DocumentCode
    1670663
  • Title

    A 21 mW 2.5 Gb/s 15 kΩ self-compensated differential transimpedance amplifier

  • Author

    Chia-Ming Tsai ; Huang, Li-Ren

  • Author_Institution
    Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2005
  • Firstpage
    234
  • Abstract
    A differential transimpedance amplifier combined with a positive feedback compensation circuit tolerates 1.5 pF parasitic capacitance from ESD protection in 0.35 μm SiGe BiCMOS. A 2.5 Gb/s optical receiver demonstrates 15 kΩ transimpedance gain and DR from -3 to -23.5 dBm while consuming 21 mW from a 3 V supply.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; capacitance; compensation; differential amplifiers; electrostatic discharge; feedback amplifiers; integrated circuit design; optical receivers; power consumption; protection; 0.35 micron; 1.5 pF; 2.5 Gbit/s; 21 mW; 3 V; ESD protection; SiGe; SiGe BiCMOS; optical receiver; parasitic capacitance; positive feedback compensation circuit; self-compensated differential transimpedance amplifier; silicon germanium BiCMOS; transimpedance gain; BiCMOS integrated circuits; Differential amplifiers; Electrostatic discharge; Feedback circuits; Germanium silicon alloys; Optical amplifiers; Optical feedback; Parasitic capacitance; Protection; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1493955
  • Filename
    1493955