Title :
A 21 mW 2.5 Gb/s 15 kΩ self-compensated differential transimpedance amplifier
Author :
Chia-Ming Tsai ; Huang, Li-Ren
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A differential transimpedance amplifier combined with a positive feedback compensation circuit tolerates 1.5 pF parasitic capacitance from ESD protection in 0.35 μm SiGe BiCMOS. A 2.5 Gb/s optical receiver demonstrates 15 kΩ transimpedance gain and DR from -3 to -23.5 dBm while consuming 21 mW from a 3 V supply.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; capacitance; compensation; differential amplifiers; electrostatic discharge; feedback amplifiers; integrated circuit design; optical receivers; power consumption; protection; 0.35 micron; 1.5 pF; 2.5 Gbit/s; 21 mW; 3 V; ESD protection; SiGe; SiGe BiCMOS; optical receiver; parasitic capacitance; positive feedback compensation circuit; self-compensated differential transimpedance amplifier; silicon germanium BiCMOS; transimpedance gain; BiCMOS integrated circuits; Differential amplifiers; Electrostatic discharge; Feedback circuits; Germanium silicon alloys; Optical amplifiers; Optical feedback; Parasitic capacitance; Protection; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493955
