DocumentCode :
1670812
Title :
Synthesis of BaO nanowires and their humidity sensitive property
Author :
Hu, Chenguo ; Zhang, Hulin ; Zhang, Michao ; Yang, Rusen ; Zheng, Chunhua ; Wang, Xue
Author_Institution :
Dept. of Appl. Phys., Chongqing Univ., Chongqing, China
fYear :
2010
Firstpage :
1048
Lastpage :
1049
Abstract :
Barium oxide (BaO) nanowires have been synthesized for the first time by using the composite hydroxide mediated (CHM) method. The products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). Humidity sensors based on BaO nanowires were fabricated. The responsiveness to humidity for static and dynamic testing proved the ultrasensitive properties of the sensors. The resistance changed from 386 M¿ to 7.1 M¿ as the relative humidity (RH) increases from 20% to 95%. The response-time and recovery-time of the resistance is 16 s and 56 s versus the changes of relative humidity from 25% to 85%. These results indicate promising applications of BaO nanowires in a highly sensitive environmental monitoring and humidity controlled electronic device.
Keywords :
X-ray diffraction; barium compounds; field emission electron microscopy; humidity sensors; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth; semiconductor materials; transmission electron microscopy; BaO; FE-SEM; TEM; X-ray diffraction; XRD; barium oxide nanowires; composite hydroxide mediated method; dynamic testing; environmental monitoring; field emission scanning electron microscopy; humidity controlled electronic device; humidity sensitive property; humidity sensors; nanowires; recovery time; relative humidity; response time; transmission electron microscopy; Barium; Delay; Electron emission; Humidity; Nanowires; Scanning electron microscopy; Sensor phenomena and characterization; Transmission electron microscopy; X-ray diffraction; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425040
Filename :
5425040
Link To Document :
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