DocumentCode :
1670915
Title :
Process-temperature-frequency adaptive voltage scaled SRAM system for power reduction
Author :
Zhu, JiaFeng ; Bai, Na ; Wu, Jianhui
Author_Institution :
Sch. of Electron. Sci. & Eng., SouthEast Univ., Nanjing, China
fYear :
2011
Firstpage :
1
Lastpage :
4
Abstract :
High-performance Low-power static random access memories (SRAMs) are required in many battery-powered applications. This paper presents a process temperature frequency (PTF) adaptive voltage scale technique to reduce power. In the self-adaption phase, the optimal supply voltage is chose automatically according to PTF. So a significant reduction in power consumption can be achieved. Moreover, SRAMs can be accessed normally when they are in the self-adaption phase. Simulation results illustrate that saved power is more than 60% when supply voltage is changed from 1.2V to 0.7V. The optimal supply voltage is dependent on different process corners, temperatures and operating frequencies.
Keywords :
SRAM chips; low-power electronics; SRAM system; battery-powered applications; high-performance low-power static random access memories; optimal supply voltage; power consumption reduction; process temperature frequency adaptive voltage scale technique; self-adaption phase; voltage 1.2 V to 0.7 V; Adaptive systems; Clocks; Delay; Detectors; Discharges; Power demand; Random access memory; Process variability; SRAM; Yield;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2011 International Conference on
Conference_Location :
Hammamet
Print_ISBN :
978-1-4577-2207-3
Type :
conf
DOI :
10.1109/ICM.2011.6177409
Filename :
6177409
Link To Document :
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