DocumentCode
1671054
Title
Substrate integrity beyond 1 GHz
Author
Nagata, Makoto ; Fukazawa, Mitsuya ; Hamanishi, Naoyuki ; Shiochi, Masazumi ; Iida, Tetsuya ; Watanabe, Junichiro ; Murasaka, Yoshitaka ; Iwata, Atsushi
Author_Institution
Kobe Univ., Japan
fYear
2005
Firstpage
266
Abstract
Substrate coupling in a 90 nm CMOS technology is evaluated in a 1.2 V standard-cell-based loop shift register. Measurement results show that frequency dependence of digital substrate coupling beyond 1 GHz is a combination of reduced isolation in device-level coupling through MOSFETs and reduced large-signal circuit-level coupling to the substrate.
Keywords
CMOS integrated circuits; MOSFET; crosstalk; electromagnetic coupling; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; shift registers; 1 GHz; 1.2 V; 90 nm; CMOS technology; MOSFET; digital substrate coupling; frequency dependence; large-signal circuit-level coupling; reduced device-level coupling isolation; standard-cell-based loop shift register; substrate coupling; substrate integrity; CMOS logic circuits; CMOS technology; Circuit noise; Coupling circuits; Crosstalk; Detectors; Noise generators; Noise measurement; Probes; Surface impedance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
0-7803-8904-2
Type
conf
DOI
10.1109/ISSCC.2005.1493971
Filename
1493971
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