• DocumentCode
    1671150
  • Title

    Simulation of grading double hetero-junction non-polar InGaN solar cell

  • Author

    Hsun-Wen Wang ; Pei-Chen Yu ; Hau-Vei Han ; Chien-Chung Lin ; Hao-Chung Kuo ; Shiuan-Huei Lin

  • Author_Institution
    Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; numerical analysis; semiconductor device models; semiconductor heterojunctions; solar cells; wide band gap semiconductors; GaN-InxGa1-xN; graded junction; grading double heterojunction nonpolar InGaN solar cell simulation; indium contents; interface band edge offset; maximum efficiency; nonpolar double heterojunction solar cell characteristics; smoothing; Absorption; Gallium nitride; Heterojunctions; Indium; Mathematical model; Photovoltaic cells; Short circuit currents;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1671150