Title :
Design, processing and operation of a large area pin diode radiation detector
Author :
Krizaj, D. ; Resnik, D. ; Vrtancnik, D. ; Uljancic, U. ; Amon, S. ; Cindro, Vladimir
Author_Institution :
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
Abstract :
Silicon pin diode is designed for operation as a radiation detector. The detector can operate in photovoltaic as well as photoconductive mode with AC or DC coupling. The structure is equipped with a special spiral junction termination structure to prevent surface leakage currents entering active device region and improve breakdown properties of the device. Optimized low temperature processing steps have been used in order to reduce the leakage current of the diode. Coupling capacitors are monolithically integrated on the detector enabling an AC coupling mode. Best processing results have been achieved with surface oxide passivation grown in wet atmosphere and covered with additional nitride layer in conjunction with extrinsic gettering on the backside of the wafer
Keywords :
elemental semiconductors; getters; leakage currents; p-i-n diodes; passivation; photoconducting devices; photovoltaic effects; semiconductor device breakdown; silicon radiation detectors; AC coupling; DC coupling; Si; active device region; breakdown properties; coupling capacitors; extrinsic gettering; low temperature processing steps; photoconductive mode; photovoltaic mode; pin diode radiation detector; spiral junction termination structure; surface leakage current; surface oxide passivation; Electric breakdown; Leakage current; Photoconductivity; Photovoltaic systems; Process design; Radiation detectors; Silicon; Solar power generation; Spirals; Temperature;
Conference_Titel :
Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean
Conference_Location :
Tel-Aviv
Print_ISBN :
0-7803-3879-0
DOI :
10.1109/MELCON.1998.692409