• DocumentCode
    1671520
  • Title

    New approach to fabricate a deep field stop layer on the backside of power semiconductor IGBT

  • Author

    Omori, K. ; Seino, Takehisa ; Yamaguchi, Yoshio ; Kobayashi, Nao ; Kudo, T.J. ; Sano, Ko

  • Author_Institution
    Tech. Dept., Japan Steel Works, Ltd., Yokohama, Japan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Fabrication of a deep field stop layer is the key to backside process of IGBT. The shallow-implanted P-dopant was far deeply activated by Pulse-cw hybrid laser annealing. The approach leads to the low-cost process without MeV-class implantation.
  • Keywords
    insulated gate bipolar transistors; power semiconductor devices; deep field stop layer fabrication; low-cost process; power semiconductor IGBT; pulse-cw hybrid laser annealing; shallow-implanted P-dopant; Decision support systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1671520