Title :
New approach to fabricate a deep field stop layer on the backside of power semiconductor IGBT
Author :
Omori, K. ; Seino, Takehisa ; Yamaguchi, Yoshio ; Kobayashi, Nao ; Kudo, T.J. ; Sano, Ko
Author_Institution :
Tech. Dept., Japan Steel Works, Ltd., Yokohama, Japan
Abstract :
Fabrication of a deep field stop layer is the key to backside process of IGBT. The shallow-implanted P-dopant was far deeply activated by Pulse-cw hybrid laser annealing. The approach leads to the low-cost process without MeV-class implantation.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; deep field stop layer fabrication; low-cost process; power semiconductor IGBT; pulse-cw hybrid laser annealing; shallow-implanted P-dopant; Decision support systems;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
