DocumentCode
1671739
Title
Research on mechanical-electrical coupling characteristics of GaAs HEMT build-in cantilevers-mass
Author
Hou, Tingting ; Xue, Chenyang ; Liu, Guowen ; Tan, Zhenxin ; Zhang, Binzhen ; Liu, Jun ; Zhang, Wendong
Author_Institution
Nat. Key Lab. For Electron. Meas. Technol., North Univ. of China, Taiyuan, China
fYear
2010
Firstpage
1008
Lastpage
1009
Abstract
The micro-structure of GaAs HEMT build-in cantilevers-mass was designed and fabricated. GaAs HEMTs were embeded at the root of cantilevers for increasing the sensitivity to external force. In our experiments, it has been proved that the sensitivity of GaAs HEMT is higher than that of silicon by the Mechanical-Electrical coupling characteristics. The magnitude of the external force was then calculated according to the out-put voltage of GaAs HEMT. This research would be good for developing a new sensor technology.
Keywords
III-V semiconductors; cantilevers; gallium arsenide; high electron mobility transistors; GaAs; HEMT build-in cantilevers-mass; mechanical-electrical coupling characteristics; microstructure; sensor technology; Electrons; Frequency; Gallium arsenide; HEMTs; MODFETs; Silicon; Stress; Substrates; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425074
Filename
5425074
Link To Document