The electrical properties improving of ITO films on cholesteric liquid crystal layer by using two-steps deposition process

Author

Huang, HsiHao ; Lin, HsuanKai ; Chang, ChungShu

fYear

2010

Firstpage

997

Lastpage

998

Abstract

Indium tin oxide (ITO) films have been deposited at room temperature by DC magnetron sputtering and grown on a cholesteric liquid crystal (Ch-LC) layers. The surface morphology and electrical properties of ITO thin films was analyzed by scanning electron microscope, 3-dimension microscope and four-point prober. In a systematic study, the enhancement of electrical properties of ITO films was achieved by a novel two-steps deposition process. In addition, it was apparent that the surface roughness of ITO films deposited on Ch-LC layers by two-steps process was improved as well. A surface roughness of 0.509 Â¿m and a sheet resistance of 87.98 ohm/sq has been obtained by two steps process.

Keywords

cholesteric liquid crystals; electric properties; indium compounds; semiconductor thin films; sputter deposition; surface morphology; surface roughness; tin compounds; 3D microscope; DC magnetron sputtering; ITO; cholesteric liquid crystal layer; electrical properties; indium tin oxide thin films; scanning electron microscope; surface morphology; surface roughness; temperature 293 K to 298 K; two-steps deposition process; Indium tin oxide; Liquid crystals; Magnetic analysis; Rough surfaces; Scanning electron microscopy; Sputtering; Surface morphology; Surface resistance; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425079

Filename

5425079