• DocumentCode
    1671953
  • Title

    Al-doping in CsLiB6O10 for high resistance against UV laser-induced damage

  • Author

    Takachiho, K. ; Yoshimura, M. ; Fukushima, Y. ; Lu, Z.M. ; Takahashi, Y. ; Sasaki, T. ; Mori, Y.

  • Author_Institution
    Grad. Sch. of Eng., Osaka Univ., Suita, Japan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Al-doped CsLiB6O10 crystals were grown by the top-seeded solution growth method in large sizes with good optical quality. We reveal for the first time that these crystals exhibit outstanding UV-induced damage resistant performance.
  • Keywords
    aluminium; caesium compounds; laser beam effects; ultraviolet radiation effects; CsLiB6O10:Al; UV laser-induced damage; high resistance; optical quality; top-seeded solution growth; Crystals; Degradation; Laser beams; Nonlinear optics; Optical distortion; Optical harmonic generation; Optical pulses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1671953