Title :
Preparation of BaxSr1−xTiO3 thin films on TiN/Si by a novel hydrothermal-galvanic couple method
Author :
Chan, Pei-Hsuan ; Lu, Fu-Hsing
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
BaxSr1-xTiO3(BST) thin films have been prepared on TiN/Si by a novel hydrothermal-galvanic couple method at temperatures below 100°C. The TiN/Si specimens were immersed in Ba(CH3COO)2, Sr(CH3COO)2, and NaOH alkaline solutions with different concentration ratio. X-ray diffraction results show that cubic BST films were successfully formed on TiN/Si substrates by the hydrothermal-galvanic couple method. The growth rate of crystalline BST using the hydrothermal-galvanic couple method is much faster than the conventional hydrothermal method. The composition of BST thin films derived by the hydrothermal-galvanic couple method depends on the concentration ratio of Ba(CH3COO)2 and Sr(CH3COO)2. Field-emission scanning electron microscopy reveals spherical-particulate microstructure of BST films. The microstructure and crystalline of BST depend on the concentration of Ba2+ and Sr2+ in the solutions. Influences of Ba/Sr ratios on the growth behavior of BST films are investigated.
Keywords :
X-ray diffraction; barium compounds; crystal microstructure; field emission electron microscopy; liquid phase deposition; scanning electron microscopy; strontium compounds; thin films; BaxSr1-xTiO3; Si; TiN-Si; X-ray diffraction; cubic BST thin films; field-emission scanning electron microscopy; growth rate; hydrothermal-galvanic couple method; spherical-particulate microstructure; Binary search trees; Crystallization; Microstructure; Semiconductor films; Semiconductor thin films; Strontium; Temperature; Tin; Transistors; X-ray diffraction;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425084
