Title :
A 2.0 μm pixel pitch MOS image sensor with an amorphous Si film color filter
Author :
Kasano, Masahiro ; Inaba, Yuichi ; Mori, Mitsuyoshi ; Kasuga, Shigetaka ; Murata, Takahiko ; Yamaguchi, Takumi
Author_Institution :
Matsushita Electr., Kyoto, Japan
Abstract :
A CMOS image sensor with an amorphous Si film color filter is implemented on a standard Si process. The color filter thickness is less than 100 nm. The sensor achieves a 30% aperture ratio by a 1.5 transistor/pixel architecture and a 0.15 μm design rule.
Keywords :
CMOS image sensors; amorphous semiconductors; elemental semiconductors; integrated circuit design; integrated circuit testing; optical filters; silicon; 0.15 micron; 100 nm; 2.0 micron; CMOS image sensor; MOS image sensor; amorphous Si film color filter; aperture ratio; color filter thickness; design rule; pixel pitch; standard Si process; transistor/pixel architecture; Amorphous materials; Cameras; Circuits; Filters; Image sensors; Interference; Optical films; Photodiodes; Pixel; Semiconductor films;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494012
