Title :
High efficiency GaN-based light emitting diodes with embedded air voids/SiO2 nanomasks
Author :
Chiu, Ching-Hsueh ; Lin, Chien-Chung ; Han, Hau-Vei ; Lin, Da-Wei ; Chen, Yan-Hao ; Liu, Che-Yu ; Lan, Yu-Pin ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
We fabricated high efficiency LEDs with embedded micro-scale air voids and SiO2 nanomask exhibit smaller reverse-bias current and great enhancement of the light output (65% at 20mA) compared with the conventional LEDs.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanophotonics; optical fabrication; wide band gap semiconductors; GaN; LED; SiO2; current 20 mA; embedded air voids nanomasks; light emitting diodes; reverse-bias current; Educational institutions; Epitaxial layers; Gallium nitride; Light emitting diodes; Photonics; Scanning electron microscopy; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
