Title :
A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor
Author :
Sugawa, Shigetoshi ; Akahane, Nana ; Adachi, Satoru ; Mori, Kazuya ; Ishiuchi, Toshiyuki ; Mizobuchi, Koichi
Author_Institution :
Tohoku Univ., Miyagi, Japan
Abstract :
The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the overflow charges from the photodiode when it saturates. The 7.5×7.5 μm2 pixel, 1/3" VGA sensor fabricated in a 0.35 μm 3M2P CMOS process achieves a 100 dB dynamic range with no image lag, 0.15 mVrms random noise and 0.15 mV fixed pattern noise.
Keywords :
CMOS image sensors; integrated circuit design; integrated circuit measurement; integrated circuit noise; integrating circuits; photodiodes; random noise; thin film capacitors; 0.15 mV; 0.33 inch; 0.35 micron; 7.5 micron; CMOS image sensor; CMOS process; VGA sensor; dynamic range; fixed pattern noise; image lag; lateral overflow integration capacitor; photodiode overflow charge integration; photodiode saturation; pixel lateral overflow capacitor; random noise; wide DR CMOS image sensor; CMOS image sensors; Capacitors; Circuit noise; Dynamic range; Instruments; Photodiodes; Pixel; Switches; Threshold voltage; Turning;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494014
