A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

Author

Sugawa, Shigetoshi ; Akahane, Nana ; Adachi, Satoru ; Mori, Kazuya ; Ishiuchi, Toshiyuki ; Mizobuchi, Koichi

Author_Institution

Tohoku Univ., Miyagi, Japan

fYear

2005

Firstpage

352

Abstract

The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the overflow charges from the photodiode when it saturates. The 7.5×7.5 μm² pixel, 1/3" VGA sensor fabricated in a 0.35 μm 3M2P CMOS process achieves a 100 dB dynamic range with no image lag, 0.15 mV_rms random noise and 0.15 mV fixed pattern noise.

Keywords

CMOS image sensors; integrated circuit design; integrated circuit measurement; integrated circuit noise; integrating circuits; photodiodes; random noise; thin film capacitors; 0.15 mV; 0.33 inch; 0.35 micron; 7.5 micron; CMOS image sensor; CMOS process; VGA sensor; dynamic range; fixed pattern noise; image lag; lateral overflow integration capacitor; photodiode overflow charge integration; photodiode saturation; pixel lateral overflow capacitor; random noise; wide DR CMOS image sensor; CMOS image sensors; Capacitors; Circuit noise; Dynamic range; Instruments; Photodiodes; Pixel; Switches; Threshold voltage; Turning;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-8904-2

Type

conf

DOI

10.1109/ISSCC.2005.1494014

Filename

1494014