Title :
Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology
Author :
Suntharalingam, Vyshnavi ; Berger, Robert ; Burns, James A. ; Chen, Chenson K. ; Keast, Craig L. ; Knecht, Jeffrey M. ; Lambert, Renee D. ; Newcomb, Kevin L. ; Mara, Daniel M O ; Rathman, Dennis D. ; Shaver, David C. ; Soares, Antonio M. ; Stevenson, Char
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
A 1024×1024 integrated image sensor with 8 μm pixels, is developed with 3D fabrication in 150 mm wafer technology. Each pixel contains a 2 μm×2 μm×7.5 μm 3D via to connect a deep depletion, 100% fill-factor photodiode layer to a fully depleted SOI CMOS readout circuit layer. Pixel operability exceeds 99.9%, and the detector has a dark current of <3 nA/cm2 and pixel responsivity of ∼9 μV/e at room temperature.
Keywords :
CMOS image sensors; dark conductivity; electric current; integrated circuit design; integrated circuit interconnections; integrated circuit measurement; photodiodes; silicon-on-insulator; 1024 pixel; 150 mm; 2 micron; 20 C; 3D fabrication; 3D integrated circuit technology; 7.5 micron; 8 micron; Si-SiO2; deep depletion photodiode layer; detector dark current; fill-factor; fully depleted SOI CMOS readout circuit layer; integrated image sensor; megapixel CMOS image sensor; pixel 3D via; pixel operability; pixel responsivity; pixel size; wafer technology; CMOS image sensors; CMOS technology; Dark current; Detectors; Fabrication; Image sensors; Integrated circuit technology; Photodiodes; Pixel; Three-dimensional integrated circuits;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494016
