Title :
Influence of nano-embossing on properties of Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film
Author :
Shen, Zhenkui ; Chen, Zhihui ; Fang, Jiangrong ; Lu, Bingrui ; Qiu, Zhijun ; Jiang, Anquan ; Chen, Yifang ; Qu, Xinping ; Liu, Ran
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
In this work, we apply nano-embossing technology to fabricate Pb(Zr0.3, Ti0.7)O3 (PZT) ferroelectric thin film nanostructures and investigate the influence of the patterning process on the material and ferroelectric properties by using SEM, XRD and Precision Ferroelectric Tester. Embossing process has been optimized for embossing depth and pattern profile. It was found that embossing will result in (100) preferred orientation of the PZT thin film. The electrical characteristics of patterned and unpatterned PZT films have been also studied for comparison.
Keywords :
X-ray diffraction; embossing; ferroelectric thin films; lead compounds; nanopatterning; scanning electron microscopy; titanium compounds; zirconium compounds; PZT ferroelectric thin film nanostructures; PZT thin film; Pb(Zr0.3Ti0.7)O3; X-ray diffraction; depth profile; electrical characteristics; embossing process; ferroelectric properties; material properties; nano-embossing technology; pattern profile; patterning process; precision ferroelectric tester; scanning electron microscopy; Annealing; Embossing; Ferroelectric films; Ferroelectric materials; Nanostructures; Radio access networks; Scanning electron microscopy; Switches; Temperature; Transistors;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425090
