Title :
Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation
Author :
Lin, Da-Wei ; Wang, Chao-Hsun ; Chang, Shih-Pang ; Ku, Pu-Hsih ; Lan, Yu-Pin ; Kuo, Hao-Chung ; Lu, Tien- Chang ; Wang, Shing-Chung ; Chang, Chun-Yen
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Efficiency and droop behavior in InGaN/GaN light-emitting diodes are both improved by selectively-graded-composition multi-quantum barriers (SGQB). Simulation results show that SGQB could moderately improve the hole transport in active region. In the meantime, spatial distribution overlap between electrons and holes in active region could be also well-considered. Therefore, the radiative recombination of SGQB LED is more efficient than that of conventional LED. The overall efficiency and droop behavior are simultaneously improved in SGQB LED, at both low and high current density.
Keywords :
III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN-GaN; active region; carrier distribution manipulation; droop improvement; hole transport; light emitting diode; radiative recombination; selectively graded composition multiquantum barriers; Charge carrier processes; Current density; Gallium nitride; Light emitting diodes; Power generation; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
