Title :
Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells
Author :
Jokubavicius, Valdas ; Liljedahl, Rickard ; Yakimova, Rositza ; Syväjärvi, Mikael
Author_Institution :
Dept. of Phys., Chem. & Biol., Linkoping Univ., Linköping, Sweden
Abstract :
6H- and 3C-SiC layers were grown using a sublimation based process. The polytype balance is mainly given by the substrate orientation and growth temperature. This paves the way to use 6H- and 3C-SiC in optoelectronic applications.
Keywords :
epitaxial growth; light emitting diodes; semiconductor growth; silicon compounds; solar cells; sublimation; substrates; wide band gap semiconductors; 3C-SiC growth; 6H-SiC growth; LED; SiC; growth temperature; optoelectronic applications; polytype balance; solar cells; sublimation based process; substrate orientation; Boron; Nitrogen; Photovoltaic cells; Silicon carbide; Substrates; Thermal stability;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
