High performance low current CDMA receiver front end using 0.18 μm SiGe BiCMOS

Author

Kamat, Manish ; Ye, Peihua ; He, Yong ; Agarwal, Basant ; Good, Pete ; Lloyd, Steve ; Loke, Aravind

Author_Institution

Skyworks Solutions Inc., Irvine, CA, USA

fYear

2003

Firstpage

23

Lastpage

26

Abstract

Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining popularity for RF circuits in wireless applications due to high performance, low cost, high yield and levels of integration with mixed signal and digital CMOS circuits. A tri-band quad mode CDMA RF receiver front end is designed in a 0.18 μm SiGe BiCMOS process that enabled LNAs with sub 1 dB noise figure and low-noise high-linearity mixers with low current consumption.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; UHF mixers; code division multiple access; integrated circuit design; integrated circuit measurement; integrated circuit noise; radio receivers; semiconductor materials; 0.18 micron; 1 dB; 1700 MHz; 1900 MHz; 800 MHz; LNA noise figure; RFIC; SiGe; SiGe BiCMOS; high-performance low-current CDMA receiver front ends; low current consumption mixers; low noise amplifiers; low-noise high-linearity mixers; silicon germanium bipolar CMOS process technology; tri-band quad-mode CDMA RF receivers; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Costs; Germanium silicon alloys; Multiaccess communication; RF signals; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213885

Filename

1213885