Title :
Large-scale syntheses of uniform ZnO nanorods and ethanol gas sensors application
Author :
Chen, Jin ; Li, Jin ; Qiu, Shaojun
Author_Institution :
Sch. of Mater. Sci. & Eng., Xi´´an Univ. of Archit. & Technol., Xi´´an, China
Abstract :
In this paper, we describe a low temperature, solution-based synthesis uniform ZnO nanorods with a gram scale, and their ethanol gas sensor property. The morphological, structural and optical properties of the as-prepared nanorods were investigated by means of transmission electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction and photoluminescence. The results showed that the sample had uniform rod-like morphology with a narrow size distribution and highly crystallinity. Room temperature photoluminescence spectra of these nanorods show an exciton emission around 380 nm and a negligible deep-level emission, indicating the nanorods have high quality. The n-type semiconductor gas sensor properties were investigated using a side-heated type structure. The sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 400°C. Our results demonstrate the potential application of ZnO nanorods for fabricating highly sensitive gas sensors and ultraviolet laser.
Keywords :
II-VI semiconductors; X-ray diffraction; crystal morphology; gas sensors; nanorods; optical properties; photoluminescence; transmission electron microscopy; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO; ethanol gas sensors; exciton emission; high-resolution transmission electron microscopy; large scale syntheses; low temperature synthesis; morphological properties; nanorods; narrow size distribution; optical properties; photoluminescence spectra; rod like morphology; structural properties; temperature 293 K to 298 K; temperature 400 degC; ultraviolet laser; Electron optics; Ethanol; Gas detectors; Large-scale systems; Optical microscopy; Photoluminescence; Stimulated emission; Temperature sensors; Transmission electron microscopy; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425099