Title :
Total dose γ-ray irradiation characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers
Author :
Zhu, Shingyang ; Li, J.H. ; Lin, Chenglu ; Gao, J.X. ; Yan, L.L.
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function of accumulative dose and bias conditions during irradiation. The stretch-out technique was used to separate the threshold-voltage shifts of PMOS and NMOS into shifts due to interface traps and trapped-oxide charge. The leakage currents of NMOS/SIMOX increased quickly after irradiation because of the parasitic back-channel MOS structure. While the BESOI devices suffered no significant back-channel effect due to thick top silicon layers
Keywords :
CMOS logic circuits; SIMOX; gamma-ray effects; logic gates; silicon-on-insulator; γ-ray irradiation; BESOI wafers; CMOS inverters; NMOS; PMOS; SIMOX wafers; interface traps; leakage currents; parasitic back-channel MOS structure; stretch-out technique; threshold-voltage shifts; total dose response; trapped-oxide charge; Annealing; Argon; Circuits; Conductivity; Implants; Inverters; MOS devices; Oxidation; Silicon; Wafer bonding;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500081
