• DocumentCode
    1672618
  • Title

    Ultra-thin-film silicon-on-insulator structure using oxidized porous silicon

  • Author

    Li, Ahen ; Huang, Yiping ; Zou, Sixun ; Tang, Tingao ; Kwor, Richard

  • Author_Institution
    Dept. of Electron. Eng., Fudan Univ., Shanghai, China
  • fYear
    1995
  • Firstpage
    266
  • Lastpage
    268
  • Abstract
    Ultra-thin-film Silicon-On-Insulator (TFSOI) structure with 100 nm-thick and 100 μm-wide top Si islands were fabricated using the full isolation by oxidized porous silicon (FIPOS) technique. These structures were characterized using XTEM, ASP, Raman spectroscopy and electrical breakdown measurement. The results indicate that the TFSOI structures are of high quality and the Si islands are fully isolated
  • Keywords
    Raman spectra; electric breakdown; island structure; isolation technology; oxidation; porous materials; silicon-on-insulator; transmission electron microscopy; ASP; FIPOS; Raman spectroscopy; Si islands; Si-SiO2; TFSOI; XTEM; electrical breakdown; fabrication; full isolation by oxidized porous silicon; ultra-thin-film silicon-on-insulator structure; Doping; Epitaxial growth; Etching; Frequency; Oxidation; Raman scattering; Silicon on insulator technology; Spectroscopy; Stress measurement; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.500082
  • Filename
    500082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1672618