A SiGe:C BiCMOS WCDMA zero-IF RF front-end using an above-IC BAW filter

Author

Carpentier, J.F. ; Cathelin, A. ; Tilhac, C. ; Garcia, P. ; Persechini, P. ; Conti, P. ; Ancey, P. ; Bouche, G. ; Caruyer, G. ; Belot, D. ; Arnaud, C. ; Billard, C. ; Parat, G. ; David, J.B. ; Vincent, P. ; Dubois, M.A. ; Enz, C.

Author_Institution

Central R&D, STMicroelectronics, Crolles, France

fYear

2005

Firstpage

394

Abstract

The feasibility of a fully integrated RF front-end using an above-IC BAW integration technique is demonstrated for WCDMA applications. The circuit has a voltage gain of 31.3dB, a noise figure of 5.3dB, an in-band IIP3 of -8dBm and IIP2 of 38dBm, with a total power consumption of 36mW. The BAW filter area is 0.45mm² and the total circuit area including the BAW filter is 2.44mm².

Keywords

3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; acoustic filters; bulk acoustic wave devices; 31.3 dB; 36 mW; 5.3 dB; Ge-Si; SiGe:C BiCMOS; WCDMA; above-IC BAW filter; integrated RF front-end; zero-IF RF front-end; Band pass filters; BiCMOS integrated circuits; Energy consumption; Film bulk acoustic resonators; Insertion loss; Linearity; Multiaccess communication; Radio frequency; Resonator filters; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-8904-2

Type

conf

DOI

10.1109/ISSCC.2005.1494035

Filename

1494035