Photoresponse characteristics of vertically aligned ZnO nanowires

In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning of the nanowires was obtained by lift-off technique, where BaF₂ film was used as a sacrificial layer. ZnO nanowires based UV detectors were fabricated using silicon microchannel. Nanowires with higher aspect ratio exhibited the highest on-off current ratio and less photoresponse time.