Title :
Hydrothermal preparation of BaTiO3 thin film on silicon
Author :
Xu, W-ping ; Wang, Lianwei ; Xin, Huoping ; Zheng, Lirong ; Lin, Chenglu
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
In situ crystallized BaTiO3 thin films have been successfully prepared on Ti-covered silicon substrates at low temperature of 160°C by hydrothermal method. The surface of the samples was dense, homogeneous and highly insulating, the films had good adherence to the substrate while exhibited dark-blue color. X-ray diffraction (XRD) characterization and spreading resistance probes (SRP) measurements showed that a multi-layer structure of cubic BaTiO3 /amorphous BaTiO3-x/Ti/Si was formed, while it became tetragonal BaTiO3/Ti/Si after rapid thermal annealing (RTA) at 600°C for 60 sec. Thus, it can be seen that hydrothermal method for preparing perovskite thin films will become an excellent low-temperature processing with great significance
Keywords :
X-ray diffraction; barium compounds; coating techniques; dielectric thin films; electrical resistivity; rapid thermal annealing; 160 C; 600 C; BaTiO3 thin film; BaTiO3-Ti-Si; Ti-covered silicon substrate; X-ray diffraction; adherence; color; hydrothermal preparation; in situ crystallization; low-temperature processing; multilayer structure; perovskite; rapid thermal annealing; spreading resistance; Crystallization; Insulation; Probes; Semiconductor thin films; Silicon; Surface resistance; Temperature; Thermal resistance; X-ray diffraction; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500086
