DocumentCode
1672767
Title
High performance SOI and bulk CMOS 5GHz VCOs
Author
Kim, Tae Youn ; Adams, Andrew ; Weste, Neil
Author_Institution
Adelaide Univ., SA, Australia
fYear
2003
Firstpage
93
Lastpage
96
Abstract
This paper presents a comparison of two 5 GHz VCOs. One is implemented in an SOI process and the other in a conventional bulk CMOS process. The SOI design presents the lowest reported power (1.65 mW, -110 dBc/Hz @ 1 MHz) in a 5 GHz VCO, while the bulk device presents the lowest phase noise achieved in a 5 GHz VCO (17.25 mW, -126 dBc/Hz @ 1 MHz). The design tradeoffs are discussed.
Keywords
CMOS integrated circuits; MMIC oscillators; integrated circuit design; integrated circuit measurement; integrated circuit noise; low-power electronics; phase noise; silicon-on-insulator; voltage-controlled oscillators; 0.18 micron; 0.5 micron; 1.65 mW; 17.25 mW; 5 GHz; Si-SiO2; VCO power consumption; high performance SOI/bulk CMOS VCO; low power/phase noise VCO; microwave voltage controlled oscillators; oscillator comparison; oscillator design tradeoffs; 1f noise; Amplitude modulation; Australia; CMOS process; Frequency modulation; MOS devices; Phase noise; Tail; Varactors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1213901
Filename
1213901
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