• DocumentCode
    1672830
  • Title

    Highly ordered growth of ZnO nanostructures by combination of nanoimprint lithography and hydrothermal method

  • Author

    Deng, Shao-Ren ; Chen, Tao ; Liu, Shu-Yi ; Chen, Yi-Fang ; Huq, Ejaz ; Liu, Ran ; Qu, Xin-Ping

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2010
  • Firstpage
    941
  • Lastpage
    942
  • Abstract
    By combining nanoimprint lithography and traditional hydrothermal growth method of ZnO nanorods, vertical and well patterned ZnO nanostructures were successfully fabricated. The imprinted SU-8 resist deep trenches above the ZnO seed layer prohibit the lateral growth of ZnO nanorods. Various patterned vertical ZnO nanostructures like nanorods and nanowalls can be obtained. The improvement of photoluminescence property of ZnO nanorods was observed after removing the SU-8 resist from the substrate by O2 reactive ion etching (RIE).
  • Keywords
    II-VI semiconductors; nanolithography; nanostructured materials; photoluminescence; resists; sputter etching; wide band gap semiconductors; zinc compounds; O2 reactive ion etching; ZnO; highly ordered growth; hydrothermal method; imprinted SU-8 resist deep trenches; nanoimprint lithography; nanorods; nanostructure materials; nanowalls; photoluminescence; zinc oxide seed layer; Etching; Gratings; Lithography; Nanolithography; Nanostructures; Photoluminescence; Radio access networks; Resists; Solvents; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425115
  • Filename
    5425115