DocumentCode
1672830
Title
Highly ordered growth of ZnO nanostructures by combination of nanoimprint lithography and hydrothermal method
Author
Deng, Shao-Ren ; Chen, Tao ; Liu, Shu-Yi ; Chen, Yi-Fang ; Huq, Ejaz ; Liu, Ran ; Qu, Xin-Ping
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2010
Firstpage
941
Lastpage
942
Abstract
By combining nanoimprint lithography and traditional hydrothermal growth method of ZnO nanorods, vertical and well patterned ZnO nanostructures were successfully fabricated. The imprinted SU-8 resist deep trenches above the ZnO seed layer prohibit the lateral growth of ZnO nanorods. Various patterned vertical ZnO nanostructures like nanorods and nanowalls can be obtained. The improvement of photoluminescence property of ZnO nanorods was observed after removing the SU-8 resist from the substrate by O2 reactive ion etching (RIE).
Keywords
II-VI semiconductors; nanolithography; nanostructured materials; photoluminescence; resists; sputter etching; wide band gap semiconductors; zinc compounds; O2 reactive ion etching; ZnO; highly ordered growth; hydrothermal method; imprinted SU-8 resist deep trenches; nanoimprint lithography; nanorods; nanostructure materials; nanowalls; photoluminescence; zinc oxide seed layer; Etching; Gratings; Lithography; Nanolithography; Nanostructures; Photoluminescence; Radio access networks; Resists; Solvents; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425115
Filename
5425115
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