Title :
Effective channel length of submicron MOSFETs: numerical simulation, physical mechanisms, and extraction methods
Author :
Narayanan, R. ; Conde, A. Ortiz ; Liou, J.J. ; Sanchez, F. I Garcia ; Parthasarathy, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Device simulations are carried out to study the physical mechanisms underlying the effective channel length of MOSFETs. Furthermore, the adequacy of widely used methods for extracting such a parameter is examined using different free-carrier mobility models implemented in the device simulator. Based on the simulation results, a more consistent and accurate definition for determining the effective channel length is also proposed
Keywords :
MOSFET; carrier mobility; semiconductor device models; device simulator; effective channel length; extraction methods; free-carrier mobility models; numerical simulation; physical mechanisms; submicron MOSFETs; Artificial intelligence; Capacitance; Doping profiles; Electric variables; MOSFETs; Medical simulation; Numerical simulation; Semiconductor process modeling; Uncertainty; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500090
