DocumentCode
1672891
Title
Simulation of ion implantation using the four-parameter kappa distribution function
Author
Puchner, H. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Austria
fYear
1995
Firstpage
295
Lastpage
297
Abstract
A two-dimensional model for the simulation of ion implantation into arbitrary geometries has been developed. The four-parameter kappa distribution function was introduced for the first time in semiconductor technology to describe the vertical dopant profile of implanted ions. Owing to the low computational effort and the short simulation time the given method is an alternative to modern Monte Carlo simulations for ion implantation processes
Keywords
digital simulation; doping profiles; ion implantation; semiconductor process modelling; arbitrary geometries; four-parameter kappa distribution function; ion implantation; simulation time; two-dimensional model; vertical dopant profile; Analytical models; Computational modeling; Convolution; Distributed computing; Distribution functions; Geometry; Ion implantation; Semiconductor process modeling; Solid modeling; Statistical distributions;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500091
Filename
500091
Link To Document