SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures

Author

Chang, Y.W. ; Kuo, J.B.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1995

Firstpage

298

Lastpage

300

Abstract

This paper reports a 2D analysis of the quasi-saturation behavior of 6H-SiC DMOS devices considering surface trapping effect. Based on the study, in the pre-quasi-saturation region, the drain current is predominantly determined by the surface trapping effect. In the quasi-saturation region, the drain current is mainly influenced by the electron mobility in the substrate region

Keywords

MOSFET; electron mobility; electron traps; semiconductor device models; semiconductor materials; silicon compounds; DMOS devices; SiC; drain current; electron mobility; elevated temperatures; pre-quasi-saturation region; quasi-saturation behavior; substrate region; surface trapping effect; two-dimensional analysis; Doping; Electron mobility; Electron traps; Erbium; MOS devices; Photonic band gap; Semiconductor process modeling; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500092

Filename

500092

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1672915