Title :
2-dimensional analysis and experiment of planar high-voltage device terminal
Author :
Xiaowu, Gong ; Yumin, Gao ; Jinsheng, Luo
Author_Institution :
Inst. of Microelectron., Xi´´an Jiaotong Univ., China
Abstract :
Using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of planar high-voltage device. It can simulate reverse characteristics of high-voltage device relating to field limiting rings, field plates, SiO2 dielectric and interface charge. The simulation example and experimental results of a planar junction structure with field plates and field rings are given in this paper
Keywords :
MIS devices; characteristics measurement; digital simulation; finite element analysis; power semiconductor devices; semiconductor device models; MOS devices; SiO2; computer simulation program; field limiting rings; field plates; interface charge; planar high-voltage device; planar junction structure; reverse characteristics; terminal field calculation; two-dimensional finite-element numerical analysis; Computational modeling; Computer simulation; Dielectric devices; Finite element methods; Gaussian distribution; Laplace equations; Microelectronics; Numerical analysis; Semiconductor devices; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500093
