• DocumentCode
    1672971
  • Title

    Carbon-assisted growth technology for ZnO nanowires

  • Author

    Cheng, C. ; Wong, T.L. ; Li, W. ; Yu, D.P. ; Wang, N.

  • Author_Institution
    Dept. of Phys. & the Inst. of Nano Sci. & Technol., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2010
  • Firstpage
    929
  • Lastpage
    930
  • Abstract
    Using thermal evaporation of ZnO at high temperature in vacuum, we fabricated ZnO nanowires (NWs) directly on carbon-based materials (amorphous carbon and photoresist). SEM observations showed that ZnO NWs preferentially nucleate on carbon and grew perpendicularly to the surface of the carbon-based materials. Based on this new developed carbon-assisted growth technology, we realized large-area and patterned growth of high-quality ZnO NWs with low cost.
  • Keywords
    II-VI semiconductors; evaporation; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; SEM; ZnO; amorphous carbon; carbon-assisted growth technology; nanowires; photoresist; thermal evaporation; Amorphous materials; Lattices; Nanowires; Optoelectronic and photonic sensors; Resists; Scanning electron microscopy; Spectroscopy; Substrates; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425120
  • Filename
    5425120