Differential SiGe power amplifier for 3GPP WCDMA

Author

Juurakko, Pasi ; Saari, Ville ; Ryynänen, Jussi ; Halonen, Kari

Author_Institution

Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland

fYear

2003

Firstpage

133

Lastpage

136

Abstract

An integrated differential two-stage power amplifier (PA) operating at the 2 GHz frequency range is introduced. The implemented power amplifier uses 2.7 V supply voltage and was fabricated with 0.35μm SiGe BiCMOS technology. The measured output power at the -1 dB compression point is 21 dBm, but the amplifier is capable of providing 26.7 dBm output power at the -5 dB gain compression. The measured linear gain is 22 dB. The chip area is 2.36 mm² including bonding pads. The linearity performance of the power amplifier was measured with 3GPP WCDMA basestation signal. The power amplifier fulfilled the 3GPP WCDMA Adjacent Channel Leakage Ratio (ACLR) specifications (ACLR1=45 dB and ACLR2=50 dB) with 11.65 dBm average channel output power.

Keywords

3G mobile communication; BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; code division multiple access; differential amplifiers; semiconductor materials; 0.35 micron; 2 GHz; 2.7 V; 3GPP WCDMA; SiGe; SiGe BiCMOS technology; adjacent channel leakage ratio; integrated differential two-stage power amplifier; Differential amplifiers; Frequency; Gain measurement; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213910

Filename

1213910