Fabrication and properties of Nano h-BN Coated SiC/ Epoxy Composites

Author

Jin, Hai-yun ; Shi, Hui-cheng ; Zhang, Tao ; Gao, Nai-kui ; Peng, Zong-ren

Author_Institution

State Key Lab. of Electr. Insulation & Power Equip., Xi´´an Jiaotong Univ., Xi´´an, China

fYear

2010

Firstpage

915

Lastpage

916

Abstract

In order to improve the properties of Silicon Carbide (SiC) filled Epoxy based composites, core-shell structure SiC/ Hexagonal Boron Nitride (h-BN) particles (SiC coated with nano-BN) were synthesized by in-situ chemical reaction and Nano h-BN Coated SiC/Epoxy Composites were fabricated. The TEM observed showed that the h-BN size was about 20-30 nm, and the dielectric properties tests showed that the core-shell structure filled composites had different properties with normal SiC/Epoxy composites.

Keywords

III-V semiconductors; boron compounds; dielectric losses; filled polymers; nanocomposites; nanofabrication; nanoparticles; semiconductor growth; silicon compounds; transmission electron microscopy; wide band gap semiconductors; SiC-BN; TEM; core-shell structure; dielectric loss; dielectric properties; hexagonal boron nitride particles; in-situ chemical reaction; silicon carbide filled epoxy based composites; Chemicals; Conducting materials; Dielectric materials; Dielectrics and electrical insulation; Fabrication; Nanocomposites; Polymers; Powders; Silicon carbide; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425124

Filename

5425124