Title :
A 1-Watt doubly balanced 5GHz flip-chip SiGe power amplifier
Author :
Tanzi, Nebil ; Dykstra, Jeff ; Hutchinson, Ken
Author_Institution :
Integrated Circuit Technol. Res. Lab, Motorola Inc., Schaumburg, IL, USA
Abstract :
A doubly balanced 5GHz flip-chip SiGe power amplifier with Low Temperature Co-Fired Ceramic (LTCC) matching networks is described. A doubly balanced amplifier features two balanced amplifiers connected in a push-pull configuration using 180-degree hybrids. The amplifier achieves a saturated output power and power added efficiency (PAE) of 31.5dBm and 24% respectively. At its 1dB compression point, the amplifier delivers 29.6dBm to a 50Ω load, and has a PAE of 18.5%. At 5GHz, the amplifier´s small-signal gain is 20.6dB, with input and output return losses in excess of 10dB. The amplifier´s 1dB power bandwidth is 700MHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; differential amplifiers; flip-chip devices; impedance matching; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; semiconductor materials; 1 W; 10 dB; 18.5 percent; 180-degree hybrid; 20.6 dB; 24 percent; 5 GHz; 700 MHz; LTCC matching network; RF BiCMOS IC; SiGe; doubly balanced flip-chip SiGe power amplifier; output power; power added efficiency; push-pull configuration; return loss; small-signal gain; Bandwidth; Differential amplifiers; Germanium silicon alloys; Microwave amplifiers; Power amplifiers; Power generation; Safety; Silicon germanium; Switches; Transceivers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213912
