Title :
A CMOS power amplifier with power control and T/R switch for 2.45-GHz Bluetooth/ISM band applications
Author :
Khannur, Pradeep B.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
The design and performance of a 2.45-GHz power amplifier with 3-bit digital power control (30-dB control in 5-dB step) and T/R switch for 2.45-GHz Bluetooth and ISM band applications using 0.18-μm, single-poly six-metal standard CMOS process with thick top-metal (2-μm) and metal-insulator-metal (MIM) capacitor option are presented in this paper. The proposed design uses single-stage Class-AB topology for the power amplifier. In-house extracted models were used for active and passive components to achieve success on silicon for the first time. The power output is +3.5 dBm at 2.45-GHz after the T/R switch. The drain efficiency is 16% including insertion loss of the T/R switch. The circuit operates from a single 1.8V ± 10% supply and draws total drain current of 8 mA. The operating temperature range is from -40°C to +85°C.
Keywords :
Bluetooth; CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; digital control; power control; transceivers; -40 to 85 degC; 0.18 micron; 1.8 V; 2.45 GHz; 3 bit; 8 mA; Bluetooth; CMOS power amplifier; Class-AB topology; ISM band; MIM capacitor; RF transceiver; T/R switch; digital power control; wireless communication; Bluetooth; CMOS process; MIM capacitors; Metal-insulator structures; Power amplifiers; Power control; Semiconductor device modeling; Switches; Thickness control; Topology;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213913
