A 2.3GHz SiGe RFIC front-end for U.S. satellite radio applications

Author

Pelleriti, Roberto ; Cali, G. ; Bruno, Angela ; Camden, Richard ; De Vita, Placido ; Palleschi, Antonio ; Paparo, Mario ; Schiro, Caterina ; Geraci, Salvatore

Author_Institution

STMicroelectronics, Catania, Italy

fYear

2005

Firstpage

436

Abstract

A 0.35 μm SiGe BiCMOS double-conversion digital audio satellite radio receiver with on-chip RF and IF PLL is presented. The 17mm² front-end has -97dBm input sensitivity, 3.5dB NF, -13dBm off-channel IIP3 at maximum RF gain and 12dBm at minimum RF gain, 35dB RF and 90dB IF gain range, with >30dB image rejection and 30dBm on-channel OIP3. The RF VCO features a phase noise of -107dBc/Hz at 100kHz offset.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; digital audio broadcasting; phase locked loops; phase noise; radio receivers; radiofrequency integrated circuits; satellite communication; voltage-controlled oscillators; 0.35 micron; 2.3 GHz; BiCMOS; IF PLL; RF VCO; RFIC front-end; SiGe; USA; double-conversion digital audio receiver; on-chip RF; phase noise; satellite radio applications; BiCMOS integrated circuits; Germanium silicon alloys; Noise measurement; Phase locked loops; Radio frequency; Radiofrequency integrated circuits; Receivers; Satellite broadcasting; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-8904-2

Type

conf

DOI

10.1109/ISSCC.2005.1494056

Filename

1494056