Title :
Robust and performing RF LDMOS device integrated in a VLSI BCD silicon technology
Author :
Labate, L. ; Moscatelli, A. ; Stella, R.
Author_Institution :
STMicroelectronics, Cornaredo, Italy
Abstract :
A high performance RF LDMOS device suitable for RF power amplifier handsets applications has been successfully integrated in a 0.35 μm pure silicon BCD technology. In this paper, device architecture, DC, small signal and load pull performances are shown, together with device model description and accuracy.
Keywords :
MOS analogue integrated circuits; VLSI; mobile handsets; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; 0.35 micron; RF LDMOS device; RF power amplifier; VLSI BCD silicon technology; mobile handset; CMOS process; CMOS technology; High power amplifiers; Immune system; Lithography; Radio frequency; Radiofrequency amplifiers; Silicon; Substrates; Very large scale integration;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213916
