Title :
High frequency noise characteristics of RF MOSFETs in subthreshold region
Author :
To, Kun-Hin ; Park, Young-Bog ; Rainer, T. ; Brown, William ; Huang, Margaret W.
Author_Institution :
Digital DNA, Motorola Inc., Tempe, AZ, USA
Abstract :
High frequency noise characteristics of 0.13um and 0.18um n-type MOSFET across a full range of bias conditions is presented in this paper. Focus is mainly on nMOSFET\´s behavior in "off" state, which is not predicted accurately by existing commercial models. This is a region especially important for full-chip RFCMOS design. In this paper, noise parameters (NFmin, RN, Γopt) up to 6GHz are investigated in detail. From the device perspective, the power spectral density of channel noise and induced gate noise is also studied to understand how MOSFETs actually operate from strong inversion to weak inversion and depletion.
Keywords :
MOSFET; semiconductor device noise; 0.13 micron; 0.18 micron; 6 GHz; RF MOSFET; channel noise; high frequency noise; induced gate noise; off state; power spectral density; subthreshold region; 1f noise; Circuit noise; Circuit topology; Integrated circuit noise; MOSFETs; Noise generators; Predictive models; Radio frequency; Semiconductor device noise; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213917
