Title :
Kinetic surface roughening of TaN thin films sputtered at different N2/Ar flow ratios
Author :
Yang, Jijun ; Liu, Bo ; Wang, Yuan ; Xu, Kewei
Author_Institution :
Key Lab. of Radiat. Phys. & Technol. of Minist. of Educ., Sichuan Univ., Chengdu, China
Abstract :
Tantalum nitride (TaN) thin films with different thicknesses were deposited by reactive sputtering technology as a function of N2/Ar flow ratio. Film microstructure was investigated by X-ray diffraction (XRD), and surface roughening was analyzed by atomic force microscopy and dynamic scaling theory. With increasing N2/Ar flow ratio, the film structure changes from polycrystalline to amorphous. With increasing N2/Ar flow ratio, film surface roughness first decreases and then increases, and the evolution of growth exponent ß exhibits the similar behavior. However, the roughness exponent ¿ first increases and then decreases. The influence of microstructure and growth process on kinetic surface roughening of the films was discussed.
Keywords :
X-ray diffraction; amorphous state; atomic force microscopy; sputter deposition; surface roughness; tantalum compounds; thin films; N2-Ar flow ratio; TaN; X-ray diffraction; atomic force microscopy; dynamic scaling theory; growth exponent; kinetic surface roughening; microstructure; reactive sputtering; roughness exponent; thin films; Argon; Atomic force microscopy; Atomic layer deposition; Kinetic theory; Microstructure; Rough surfaces; Sputtering; Surface roughness; X-ray diffraction; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425128
