DocumentCode
1673219
Title
Molecular dynamics simulation of Argon-atom bombardment on graphene sheets
Author
Wei, Xiao-Lin ; Zhang, Kai-Wang ; Wang, Ru-Zhi ; Liu, Wen-Liang ; Zhong, Jian-Xin
Author_Institution
Lab. for Quantum Eng. & Micro-Nano Energy Technol., Xiangtan Univ., Xiangtan, China
fYear
2010
Firstpage
566
Lastpage
567
Abstract
By a molecular dynamics method and using different incident energy and particle density, we calculated the argon-atom bombardment on a graphene sheet. The results show that, the damage of the bombardment on the graphene sheet depends not only on the incident energy but also on the particle density of argon atoms. To compare and analyze the effect of the incident energy and the particle density in the argon-atom bombardment, we defined the impact factor on graphene sheet of the incident energy and the particle density by analyzing the structural Lindeman- index and calculating the broken-hole area of the sheet, respectively. The results indicate that, there is a critical incident energy and particle density for destroying the graphene sheet, and there is an exponential accumulated-damage for the impact of both the incident energy and the particle density in argon-atom bombardment on a graphene sheet. Our results supply some valuable mechanics parameters for fabrication of potential graphene-based electronic devices with high particle radiation.
Keywords
argon; graphene; ion beam effects; molecular dynamics method; Ar; C; argon-atom bombardment; broken-hole area; graphene sheets; graphene-based electronic device application; incident energy; mechanics parameters; molecular dynamics simulation; particle density; particle radiation; structural Lindeman-index; Argon; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Computational modeling; Force measurement; Materials science and technology; Mechanical factors; Mechanical variables measurement; Nanoelectromechanical systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425129
Filename
5425129
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